MBR10150CT 1 0 a m p high voltage features high junction temperature capability good trade off between leakage current and forward volage drop low leakage current mcc catalog number maximum r e current peak reverse voltage maximum rms voltage maximum dc blocking voltage m b r 10 15 0 ct 15 0 v 105v 150 v electrical characteristics @ 2 5 c unless otherwise specified average forward current i f(av) 10 a t c = 1 5 5 c peak forward surge current i fsm 1 20 a 8.3 ms half si ne maximum instantaneous forward voltage m b r 1 0 1 5 0 ct v f . 9 2 v i fm = 5a t j = 2 5 c inches mm
a .600 .620 15.25 15.75 b .393 .409 10.00 10.40 n 0 . 1 0 2 t y p . 2 . 6 t y p . pin 1 pin 3 pin 2 case a b c k j i h g f e d n m l h 150volts to-220ab p i n 13 maximum ratings operating j u n c ti o n temperature : 1 50 c storage temperature: - 50 c to + 1 50 c p er d i o de thermal resistance 4c/w junction to case
omp onents 21201 itasca street chatsworth ! " # $
% ! " # c .104 .116 2.65 2.95 d .244 .259 6.20 6.60 e .356 .361 9.05 9.15 f .137 .154 3.50 3.93 g .511 .551 13.00 14.00 h .094 .106 2.40 2.70 i .024 .034 0.61 0.88 j .019 .027 0.49 0.70 k .147 .151 3.75 3.85 l .173 .181 4.40 4.60 m .048 .051 1.23 1.32 total thermal resistance 2.4c/w junction to case barrier rectifier power schottky maximum reverse current at rated dc blocking voltage i r 50 m a t j = 25 c 7m a t j = 125 c v f .75v i fm = 5a t j = 125 c www.kersemi.com
MBR10150CT 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 if(av) (a) pf(av)(w) d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 t d =tp/t tp fig. 1: average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 175 0 1 2 3 4 5 6 tamb(c) if(av)(a) rth(j-a)=rth(j-c) rth(j-a)=15c/w t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d = 0.5, per diode). 1e-3 1e-2 1e-1 1e+0 0 10 20 30 40 50 60 70 80 t(s) im(a) tc=50c tc=75c tc=125c i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values, per diode). 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) d = 0.5 d = 0.2 d = 0.1 single pulse t d =tp/t tp fig. 4: relative variation of thermal impedance junction to case versus pulse duration (per diode). 0 25 50 75 100 125 150 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 1e+5 vr(v) ir(a) tj=75c tj=25c tj=125c tj=150c tj=175c fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode) 1 2 5 10 20 50 100 200 10 20 50 100 200 vr(v) c(pf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode). www.kersemi.com
MBR10150CT 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 vfm(v) ifm(a) tj=125c tj=25c tj=125c typical values fig. 7: forward voltage drop versus forward current (maximum values, per diode). 0 2 4 6 8 101214161820 0 10 20 30 40 50 60 70 80 s(cm2) rth(j-a) (c/w) fig. 8: thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board, copper thickness: 35m) (stps10150cg only). www.kersemi.com
|
